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Journal of Korean Institute of Fire Science and Engineering 1996;10(2):28-39.
Published online June 30, 1996.
전력용 반도체소자(IGBT)의 모델링에 의한 열적특성 시뮬레이션
서영수백동현조문택
1명지대학교 전기공학과2경원전문대학 소방안전관리과3대원전문대학 전기과
Modeling and Thermal Characteristic Simulation of Power Semiconductor Device (IGBT)
Abstract
A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.
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